inchange semiconductor product specification silicon pnp darlington power transistors tip145/146/147 description ? with to-3pn package ? darlington ?high dc current gain ? complement to type tip140/141/142 applications ? designed for general?purpose amplifier and low frequency switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit tip145 -60 tip146 -80 v cbo collector-base voltage TIP147 open emitter -100 v tip145 -60 tip146 -80 v ceo collector-emitter voltage TIP147 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -10 a i cm collector current-peak -15 a i b base current-dc -0.5 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 ??/w r th j-a thermal resistance case to ambient 35.7 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon pnp darlington power transistors tip145/146/147 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip145 -60 tip146 -80 v ceo(sus) collector-emitter sustaining voltage TIP147 i c =-30ma, i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-5a ,i b =-10ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-10a ,i b =-40ma -3.0 v v besat base-emitter saturation voltage i c =-10a ,i b =-40ma -3.5 v v be base-emitter on voltage i c =-10a ; v ce =-4v -3.0 v tip145 v cb =-60v, i e =0 tip146 v cb =-80v, i e =0 i cbo collector cut-off current TIP147 v cb =-100v, i e =0 -1 ma tip145 v ce =-30v, i b =0 tip146 v ce =-40v, i b =0 i ceo collector cut-off current TIP147 v ce =-50v, i b =0 -2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe-1 dc current gain i c =-5a ; v ce =-4v 1000 h fe-2 dc current gain i c =-10a ; v ce =-4v 500 switching times t d delay time 0.15 | s t r rise time 0.55 | s t stg storage time 2.5 | s t f fall time v cc =-30 v, i c = -5.0 a, i b =-20 ma duty cycle ? 20% i b1 = i b2 , r c & r b varied, t j = 25 ?? 2.5 | s
inchange semiconductor product specification 3 silicon pnp darlington power transistors tip145/146/147 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.1mm)
inchange semiconductor product specification 4 silicon pnp darlington power transistors tip145/146/147
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